شبیه‌سازی گاز دوبعدی در ALGaN / GaN HEMT و بررسی ولتاژ شکست آن
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منابع مشابه
Hydrogen sensors based on AlGaN/AlN/GaN HEMT
Pt/AlGaN/AlN/GaN high electron mobility transistors (HEMT) were fabricated and characterized for hydrogen sensing. Pt and Ti/Al/Ni/Au metals were evaporated to form the Schottky contact and the ohmic contact, respectively. The sensors can be operated in either the field effect transistor (FET) mode or the Schottky diode mode. Current changes and time dependence of the sensors under the FET and ...
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In this paper, a large signal equivalent circuit empirical model based on Anglov model for ceramic package high power AlGaN/GaN HEMT has been proposed. A temperature-dependent drain current model, including self-heating effect, has been presented, and good agreements are achieved between measurement results and calculated results at different temperatures. The nonlinear capacitance models are m...
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In this paper AlGaN/GaN heterostructure device analysis carried out which are capable for high power and frequency with performances far superior to those offered by the mainstream silicon technology and other advanced semiconductor technologies. AlGaN/GaN HEMT primarily driven by microwave wireless communication applications need. The last few years have witnessed major effort in the developme...
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عنوان ژورنال
دوره دوره 23 شماره 38 - ویژه مهندسی برق و کامپیوتر
صفحات 3- 9
تاریخ انتشار 2007-06-22
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